Scalable flash/NV structures and devices with extended endurance

ABSTRACT

Devices and methods are provided with respect to a gate stack for a nonvolatile structure. According to one aspect, a gate stack is provided. One embodiment of the gate stack includes a tunnel medium, a high K charge blocking and charge storing medium, and an injector medium. The high K charge blocking and charge storing medium is disposed on the tunnel medium. The injector medium is operably disposed with respect to the tunnel medium and the high K charge blocking and charge storing medium to provide charge transport by enhanced tunneling. According to one embodiment, the injector medium is disposed on the high K charge blocking and charge storing medium. According to one embodiment, the tunnel medium is disposed on the injector medium. Other aspects and embodiments are provided herein.

TECHNICAL FIELD OF THE INVENTION

This invention relates generally to integrated circuits and, moreparticularly, to nonvolatile programmable memory cells andreprogrammable logic circuit elements.

BACKGROUND OF THE INVENTION

General CMOS silicon gate technology has been scaled rapidly from the1.0 μm generation (V_(DD)=5.0 V) to the 0.13 μm generation (V_(DD)=1.5V) over a period of little over a decade. However, the progress ofscaling Flash/NV programming voltage and power has been limited.Additionally, the Flash/NV devices have a limited endurance. That is,these devices are capable of performing a limited number of write/erasecycles that prevent their use in a number of applications. The progressof extending the endurance of Flash/NV devices also has been limited.

Most NV devices have a floating gate and use a power hungry channel hotelectron write process and a tunnel erase process through the tunneloxide. The tunnel erase process requires both a high programming voltageand a programming field that approaches the breakdown of the oxide.Thus, conventional Flash/NV devices require attributes of high voltagetechnology and circuitry in an environment of scaled low voltage CMOStechnology. As such, the integration of NV devices with general highperformance logic technology and DRAM technology is complicated.Additionally, the endurance of these NV devices is limited to about10E5-10E6 cycles. Therefore, providing embedded Flash/EPROM in a generalrandom logic or DRAM environment to achieve enriched functions requirescomplex circuitry and many additional masks, resulting in a relativelylimited yield and high cost.

Two phase insulating materials, referred to as silicon-rich insulators(SRI), are known. SRI includes controlled and fine dispersions ofcrystalline silicon in a background of stoichiometric insulator such asSiO₂ (referred to as silicon-rich oxide or SRO), or Si₃N₄ (referred toas silicon-rich nitride or SRN). A unique set of insulators with acontrolled and wide range of electrical properties can be formed bycontrolling the amount, distribution and size of silicon crystals.

SRI materials are capable of possessing charge trapping and chargeinjecting properties. “Charge-centered” SRI has refractive index in arange that provides the material with the property for trappingelectrons or holes at the silicon centers due to the creation of quantumpotential wells. “Injector” SRI has a refractive index in a range thatprovides the material with silicon centers that are within tunnelingdistance of each other such that charge can readily communicate betweenthe charge centers. Injector SRI is characterized by high conductivityand behaves like semi-metal. The apparent high frequency dielectricconstant of this material is greater than that of silicon. Whensuperimposed on top of a dielectric, charge injected into this materialfrom a metal plate is uniformly distributed to the silicon centers,which in turn injects charges uniformly into the insulator when biased.Thus, the injector SRI reduces local field fluctuations due to defects.At the same time, a large number of silicon injector centers at theinsulator interface provides a geometrical pattern that enhances thetunneling, and thus the charge transfer or conduction, at significantlyreduced average fields. This material has been termed an “injector”because of this enhanced tunneling.

Charge-centered or trapping SRI is a charge storing medium that includescharge-centered SRO characterized by a refractive index in theapproximate range of 1.5 to 1.6, and further includes charge-centeredSRN characterized by a refractive index in the approximate range from2.1 to 2.2. Injector SRI is a charge injector medium that includesinjector SRO characterized by a refractive index that is approximately1.85 and greater, and further includes injector SRN characterized by arefractive index that is approximately 2.5 and greater. It was observedthat the SRN class of materials was significantly more stable at hightemperature compared to SRO in terms of interdiffusion and growth ofsilicon centers during high temperature processing as well as in termsof providing a reproducible interface between silicon and SRI and/orSiO₂ and SRI.

It has been proposed to use charge centered and injector SRI material ina variety of NV FET structures and associated Flash, PROM, EPROM,EEPROM, antifuse cells and arrays. In one of these proposed embodiments,the gate insulator stack includes a tunnel oxide, a thin layer ofcharge-centered SRN to trap charges and thereby act like a “floatingplate,” an overlayer of thicker CVD oxide, and a layer of injector SRN.The top CVD oxide is designed to prevent charge loss at the operatingfield and to be optimized for the appropriate programming voltage. Theequivalent oxide thickness (t_(ox)) of the gate insulator stack isprimarily dependent on the tunnel oxide and the barrier CVD oxidethickness. The stack is scalable with respect to the programming voltagebecause the required programming field is reduced to 6-7E6 V/cm due tothe injector-induced enhanced tunneling compared to 10-11E6 V/cm for aconventional NV/FET structure. Additionally, the programming gatevoltage is directly coupled into the charge-centered layer to provide100% coupling efficiency compared to the typical floating gatestructures where capacitor divider effects and the cell geometrydetermine the coupling efficiency. The coupling efficiency for afloating gate structure is typically around 50%-70%. These proposeddevices were shown to exhibit many orders of magnitude greater retentionbecause of the reduced programming field. These devices aresignificantly more power efficient as they are written to and erased bydirect tunneling, rather than by channel hot electron injection.However, the write/erase fields were still too high, and both theendurance and power reductions were still too limited.

Silicon “quantum dots” of 3 nm to 10 nm diameter have been fabricated ina controlled manner by either Low Pressure Chemical Vapor Deposition(LPCVD) followed by oxidation or by gas phase pyrolysis of silane tocreate nano crystal silicon aerosol. It has been proposed to eitherplace these silicon nano crystals on top of the tunnel oxide or embedthem into the gate insulator oxide. These nano crystals behave as chargecenters similar to the charge-centered SRI layer described above. NV FETgate stacks were formed with the silicon quantum dots by adding athicker oxide overlayer. While somewhat reduced voltage write/erase andup to 10E6 endurance were demonstrated, the write/erase fields werestill too high, and both the endurance and the power reductions werestill too limited.

Therefore, there is a need in the art to provide Flash/NV technologythat overcomes these problems by being capable of using scalableprogrammable voltages and power, by being easily integratable withgeneral scaled logic technology while minimizing the overhead associatedwith Flash/NV technology features, by extending endurance, and byproviding faster write-erase cycles without impacting retention andreliability.

SUMMARY OF THE INVENTION

The above mentioned problems are addressed by the present subject matterand will be understood by reading and studying the followingspecification. The present subject matter provides a scalable Flash/NVstructure that further extends the scalability of NV technology byproviding a gate stack with a high K dielectric, a charge center orcharge storing medium and at least one charge injector medium. Thepresent subject matter requires a lower programming field, improvesendurance, achieves faster write-erase cycles, and has variables thatare capable of being manipulated for scaling purposes.

One aspect is a gate stack for a nonvolatile device. According to oneembodiment, the gate stack includes a tunnel medium, a high K chargeblocking and charge storing medium, and an injector medium. According tothis embodiment, the high K charge blocking and charge storing medium isdisposed on the tunnel medium. Also according to this embodiment, theinjector medium is operably disposed with respect to the tunnel mediumand the high K charge blocking and charge storing medium to providecharge transport by enhanced tunneling. According to one embodiment, theinjector medium is disposed on the high K charge blocking and chargestoring medium. According to one embodiment, the tunnel medium isdisposed on the injector medium.

One embodiment of the gate stack includes a first injector medium, atunnel medium disposed on the first injector medium, a high K chargeblocking and charge storing medium disposed on the tunnel medium, and asecond injector medium disposed on the high K charge blocking and chargestoring medium.

According to one embodiment, the gate stack includes a tunnel medium, ahigh K charge storing medium disposed on the tunnel medium, a high Kcharge blocking medium stored on the high K charge storing medium, andan injector medium. The injector medium is operably disposed withrespect to the tunnel medium, the high K charge storing medium and thehigh K charge blocking medium to provide charge transport by enhancedtunneling. According to one embodiment, the injector medium is disposedon the high K charge blocking and charge storing medium. According toone embodiment, the tunnel medium is disposed on the injector medium.

One embodiment of the gate stack includes a first injector mediumdisposed on a substrate, a tunnel medium disposed on the first injectormedium, a high K charge storing medium disposed on the tunnel medium, ahigh K charge blocking medium stored on the high K charge storingmedium, and a second injector medium disposed on the high K chargeblocking medium.

These and other aspects, embodiments, advantages, and features willbecome apparent from the following description of the invention and thereferenced drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graph showing refractive index of silicon-rich siliconnitride films versus SiH₂Cl₂/NH₃ flow rate ratio.

FIG. 2 is a graph showing current density versus applied field forsilicon-rich silicon nitride films having different percentages ofexcess silicon.

FIG. 3 is a graph showing flat band shift versus time at an appliedfield of 4×10⁶ volts/cm for silicon-rich silicon nitride films havingvarying percentages of excess silicon.

FIG. 4 is a graph showing flat band shift versus time at an appliedfield of 7×10⁶ volts/cm for silicon-rich silicon nitride films havingvarying percentages of excess silicon.

FIG. 5 is a graph showing apparent dielectric constant K versusrefractive index for both Silicon Rich Nitride (SRN) and Silicon RichOxide (SRO).

FIG. 6 is a cross-section view of a conventional nonvolatile fieldeffect transistor (NV FET) device or Flash device.

FIG. 7 illustrates the capacitive coupling for a conventional Flashdevice.

FIG. 8 illustrates the capacitive coupling for a nonvolatile floatingplate device.

FIG. 9 illustrates the average field enhancement due to theincorporation of a top injection layer in a gate stack for a nonvolatilefloating plate device.

FIG. 10 illustrates the average field enhancement due to theincorporation of a bottom injection layer in a gate stack for anonvolatile floating plate device.

FIG. 11 illustrates the average field enhancement due to theincorporation of both a top injection layer and a bottom injection layerin a gate stack for a nonvolatile floating plate device.

FIG. 12 illustrates the average field enhancement due to theincorporation of a high K dielectric and a top injection layer in a gatestack for a nonvolatile floating plate device.

FIG. 13 illustrates the average field enhancement due to theincorporation of a high K dielectric and a bottom injection layer in agate stack for a nonvolatile floating plate device.

FIG. 14 illustrates the average field enhancement due to theincorporation of a high K dielectric and both a top injection layer anda bottom injection layer in a gate stack for a nonvolatile floatingplate device.

FIG. 15 is a graph showing floating charge versus average programmingfield for programming voltages applied to a floating gate of aconventional flash device (VP1), a NV floating plate device (VP2), a NVfloating device having a gate stack formed with a single injection layer(VP3), and a NV floating device having a gate stack formed with a high Kdielectric and a single injection layer (VP4).

FIG. 16 is a graph showing the relationship between the log of thewrite/erase cycle, or endurance, and the average programming field.

FIG. 17 is one embodiment of a NV floating plate device.

FIG. 18 is one embodiment of a single injector layer gate stack for theNV floating plate device of FIG. 17.

FIG. 19 is one embodiment of a single injector layer gate stack for theNV floating plate device of FIG. 17.

FIG. 20 is one embodiment of the single injector layer gate stack ofFIG. 18.

FIG. 21 is one embodiment of the single injector layer gate stack ofFIG. 18.

FIG. 22 is one embodiment of a single injector layer gate stack for theNV floating plate device of FIG. 17.

FIG. 23 is one embodiment of a single injector layer gate stack for theNV floating plate device of FIG. 17.

FIG. 24 is one embodiment of the single injector layer gate stack ofFIG. 23.

FIG. 25 is one embodiment of a double injector layer gate stack for theNV floating plate device of FIG. 17.

FIG. 26 is one embodiment of the double injector layer gate stack ofFIG. 25.

FIG. 27 is one embodiment of a double injector layer gate stack for theNV floating plate device of FIG. 17.

FIG. 28 is one embodiment of the double injector layer gate stack ofFIG. 27.

FIG. 29 illustrates a memory device with an array of NV memory cellsaccording to the present invention.

DETAILED DESCRIPTION OF THE INVENTION

The following detailed description of the invention refers to theaccompanying drawings which show, by way of illustration, specificaspects and embodiments in which the invention may be practiced. In thedrawings, like numerals describe substantially similar componentsthroughout the several views. These embodiments are described insufficient detail to enable those skilled in the art to practice theinvention. Other embodiments may be utilized and structural, logical,and electrical changes may be made without departing from the scope ofthe present invention. The following detailed description is, therefore,not to be taken in a limiting sense, and the scope of the presentinvention is defined only by the appended claims, along with the fullscope of equivalents to which such claims are entitled.

The present subject matter provides a scalable Flash/NV structure thatfurther extends the scalability of NV technology by providing a gatestack with a high K dielectric, a charge center or charge storing mediumand a least one charge injector medium. In various embodiments, theinsulator stack consists of either a 4-layer element or a 5-layerelement. The 4-layer element provides a tunneling medium, a chargestoring medium, a charge blocking medium and a charge injector medium.The 5-layer element stack creates yet lower field programming by addinga second injector medium. According to one embodiment, the charge storelayer and the charge blocking layer are co-produced as one layer, as inthe case of SRI, so as to reduce the 4-layer element to a 3-layerelement and to reduce the 5-layer element to a 4-layer element. The gatestack is programmable with boot-strapped circuits without a charge pumpor high voltage add-on technology. According to various embodiments, thegate stack has an equivalent oxide thickness (t_(OX)) in the range of 5nm-15 nm, and a programming voltage across the stack (depending on thestack thickness) as low as 4-5 V, with a programming window of ˜2 V.

In addition to the power savings attributable to the reduced programmingpower, which is about one fourth of that for a conventional NV device,the structure of the present invention is currently believed to havegreater than four orders of magnitude better endurance than possible upuntil this time. Additionally, the structure of the present inventionhas variables that are capable of being manipulated to scale theprogrammable voltages and power. Furthermore, since the programmingvoltage is significantly less than the breakdown voltage of thedielectric, these variables are capable of being manipulated to achievefaster write-erase cycles. It is believed that the write-erase cyclespeed can be enhanced by greater than three orders of magnitude.

FIG. 1 is a graph showing refractive index of silicon-rich siliconnitride films versus SiH₂Cl₂/NH₃ flow rate ratio (R). This graph isprovided herein to illustrate the known relationship between the siliconamount and the refractive index. The graph indicates that the index ofrefraction increases linearly with increasing silicon content. As such,the index of refraction of the films can be used as an indication of thesilicon content of the films.

FIG. 2 is a graph showing current density versus applied field forsilicon-rich silicon nitride films having different percentages ofexcess silicon. The current density (J) is represented in amperes/cm²,and log J is plotted against the electric field E (volts/cm) for Si₃N₄layers having a SiH₂Cl₂/NH₃ flow rate ratio R of 0.1, 3, 5, 10, 15 and31. This graph is provided herein to illustrate the known relationshipbetween the amount of silicon and the conductivity of the film. The plotshows that the Si₃N₄ layers having small additions of silicon (R=3 and5) exhibit a relatively small conductivity increase over stoichiometricSi₃N₄. The plot further shows that increasing silicon content at orabove R=10 substantially increases or enhances the conductivity.

FIGS. 3 and 4 provide graphs that illustrate the known relationshipbetween the flatband shift and applied fields for films having varyingpercentages of excess silicon as represented by the SiH₂Cl₂/NH₃ flowrate ratio R. FIG. 3 is a graph showing flatband shift versus time at anapplied field of 4×10⁶ volts/cm for silicon-rich silicon nitride filmshaving varying percentages of excess silicon. For R=3, the flatbandshift is greater than the shifts produced by films having an R of 0.1,10 or 15. The film having an R of 10 provides a greater flatband shiftthan a film having an R of 15. FIG. 4 is a graph showing flatband shiftversus time at an applied field of 7×10⁶ volts/cm for silicon-richsilicon nitride films having varying percentages of excess silicon. Theflatband shift produced by the R=3 film is even greater than that shownin FIG. 3, while the shifts produced by the R=10 and R=15 films do notchange as appreciably. FIGS. 3 and 4 are provided to illustrate thecharacteristics of a charge storing medium and a more conductive chargeinjector medium as further explained below.

The graphs of FIGS. 1-4, which were described above, indicate that atlow additional silicon content, silicon-rich Si₃N₄ films function as acharge storing medium as they exhibit appreciably enhanced trappingcharacteristics (as shown by the high flatband shifts at moderate andhigh applied electric fields in FIGS. 3 and 4, respectively) withoutexhibiting appreciably enhanced conductivity characteristics as shown inFIG. 1.

Silicon-rich silicon nitride films deposited at an R of 3 or 5 (for arefractive index of 2.10 and 2.17, respectively) will possess a chargestoring function or property normally provided by a polysilicon floatinggate of a EEPROM cell. In general, silicon-rich nitride films having anR greater than 0.1 and less than 10 (or, more specifically, having anindex of refraction between approximately 2.10 and 2.30) will provideappreciably enhanced charge trapping or charge storing propertieswithout providing appreciably enhanced charge conduction. This chargetrapping is characteristic of a charge storing medium that can be usedas a floating plate within a gate stack of a NV device.

Silicon-rich nitride films having an R greater than 10 (or, morespecifically, having an index of refraction greater than 2.3) arereferred to as an injector medium. Silicon nitride injectors arepreferred over silicon oxide injectors because the two-phase nature ofthe interface is believed to provide a localized electric fielddistortion and an associated enhanced charge transport (highconduction). Silicon readily diffuses within silicon oxide at elevatedprocessing temperatures, which disrupts the injection threshold byreducing the localized field distortions. However, even at higherprocessing temperature, silicon does not readily diffuse with Si₃N₄. Asilicon-rich Si₃N₄ (SRN) injector provides appreciably enhanced chargeconductance without providing appreciably enhanced charge trapping overstoichiometric Si₃N₄. This is illustrated in FIGS. 3 and 4, which showsprogressively reduced flatband shifts for R=10 and R=15 withprogressively increased conduction.

FIG. 5 is a graph showing apparent dielectric constant K versusrefractive index for both Silicon Rich Nitride (SRN) and Silicon RichOxide (SRO). The SRN and SRO plotted in this graph were provided using aLow Pressure Chemical Vapor Deposition (LPCVD) process. The SRO wasfabricated at approximately 680° C., and the fabricated structureincluded 100 Å oxide and 150 Å SRO. The SRN was fabricated atapproximately 770° C., and the fabricated structure included 45 Å oxideand 80 Å SRN. As shown in the graph, the dielectric constant of siliconis around 12. Materials with a higher K than silicon are conventionallytermed a high K material, and materials with a lower K than silicon areconventionally termed a low K material. SRN that has a refractive indexof 2.5 or greater and SRO that has a refractive index of 1.85 or greaterhave apparent dielectric constants that are greater than 12. InjectorSRI includes these high K SRO and high K SRN. Charge-centered SRIincludes low K SRO and low K SRN.

FIG. 6 is a cross-section view of a conventional nonvolatile fieldeffect transistor (NV FET) device such as a Flash device. Theillustrated device is fabricated on a silicon substrate 612 such as a psilicon substrate or p-well in which case it is referred to as a sourceelectrode (SE), and is separated from other devices by the isolationtrenches 614. The device 610 further includes diffused regions thatfunction as a drain region 616 and a source region 618, such as theillustrated n+ diffused regions in the p substrate. A field effecttransistor (FET) channel 620 is formed in the substrate between thedrain and source regions. A source contact 622 is formed to electricallycouple with the source region 618, and a bit contact 624 is formed toelectrically couple with the drain region 616. A floating polysilicongate 626 is formed over the FET channel 620, and is separated from theFET channel 620 by tunnel oxide 628. A control gate 630, referred to asa program electrode (PE) for the illustrated embodiment, is formed overthe floating polysilicon gate 626. An oxide/nitride/oxide (ONO)interpoly dielectric 632 is provided around and between the PE 630 andthe floating gate 626. A bit line is connected to the bit contact, and aword line is connected the PE. An oxide 633 is formed around the NV FETdevice.

Common dimensions for a typical NV FET device in the 0.13 to 0.15 μmtechnology generations are provided below. The cell size for a NAND gateis approximately 0.15 μm². The FET channel is approximately 150 nm wide.Both the floating gate and the PE are approximately 150 nm wide andabout 250 nm thick. The tunnel oxide separating the floating gate fromthe FET channel is approximately 8 nm thick. The ONO interpolydielectric separating the PE and the floating gate is approximately 15nm thick. The programming voltage applied to the PE is about 16 volts,and the pulse width of a programming pulse is approximately 1 ms. Thefield generated across the tunnel oxide is approximately 12×10⁶ V/cm.The minimum program window (V_(T)(“1”)−V_(T)(“0”)) is approximately 2 V.The minimum program window is defined as the difference in the thresholdvoltages for a device with a stored one and a device with a stored zero.The endurance for a typical NV FET device is about 10⁵ write/erasecycles. The power supply V_(DD) is 3.3 V.

FIG. 7 illustrates the capacitive coupling for a conventional Flashdevice. Again, the device 710 includes a control gate or PE 730, afloating gate 726, and a substrate or SE 712. A programming voltage VP₁of 16 V is applied to the control gate. The electric field across about8 nm of tunnel oxide 728 (E_(TUN.OX)) is approximately 12×10⁶ V/cm,which reflects a coupling efficiency of about 60%. The low efficiency isattributable to the geometry and capacitor divider effects of the cell.

FIG. 8 illustrates the capacitive coupling for a nonvolatile floatingplate device. The device 840 includes a control gate 830 separated froma substrate by a gate stack 842. The gate stack 842 includes a tunnelinsulator 844, charge centers 846 that form a floating plate capable ofstoring charge, and a charge blocking dielectric 848. A programmingvoltage VP₂ of 9.2 V is applied to the control gate 830. As there is noseparate floating gate, the coupling efficiency is 100%. The averageelectric field E_(AVG) between the charge centers 846 and the substrate812 is between about 6 to 7×10⁶ V/cm.

FIG. 9 illustrates the average field enhancement due to theincorporation of a top injection layer in a gate stack for a nonvolatilefloating plate device. In this illustration, the gate stack 940, whichis interposed between the control gate 930 and the substrate 912,includes a tunnel layer 950, a charge blocking layer 952 that includescharge centers 946 that form a floating plate or a charge storingmedium, and an injector layer 954. The gate stack dielectric is SiO₂,which has a dielectric constant of about 4. The injector layer 954enhances the electric field by a factor of about 1.5 (1.5×). Aprogramming voltage VP₃ of 5.5 to 6.5 V is applied to the control gate930. The resulting average electric field E_(AVG) between the chargecenters 946 and the substrate 912 is reduced to about 4×10⁶ V/cm.

FIG. 10 illustrates the average field enhancement due to theincorporation of a bottom injection layer in a gate stack for anonvolatile floating plate device. In this illustration, the gate stack1040, which is interposed between the control gate 1030 and thesubstrate 1012, includes an injector layer 1056, a tunnel layer 1050,and a charge blocking layer 1052 that includes charge centers 1046 thatform a floating plate or a charge storing medium. The gate stackdielectric is SiO₂. A programming voltage VP₃ of 5.5 to 6.5 V is appliedto the control gate 1030. The resulting average electric field E_(AVG)between the charge centers 1046 and the substrate 1012 is reduced toabout 4×10⁶ V/cm. This illustrates that the same general results areachieved whether the injector layer is on top of the gate stack or onthe bottom of the gate stack. That is, the injector layer enhances theelectric field by a factor of about 1.5

FIG. 11 illustrates the average field enhancement due to theincorporation of both a top injection layer and a bottom injection layerin a gate stack for a nonvolatile floating plate device. In thisillustration, the gate stack 1140, which is interposed between thecontrol gate 1130 and the substrate 1112, includes a first injectorlayer 1156, a tunnel layer 1150, a charge blocking layer 1152 thatincludes charge centers 1146 that form a floating plate or a chargestoring medium, and a second injector layer 1154. The gate stackdielectric is SiO₂. The use of an injector layer on the top and on thebottom of the gate stack enhances the electric field by a factor ofabout 1.7 (1.7×). A programming voltage VP₃ of 5.5 to 6.5 V is appliedto the control gate 1130. The resulting average electric field E_(AVG)between the charge centers 1146 and the substrate 1112 is reduced toabout 3.5×10⁶ V/cm.

FIGS. 12, 13 and 14 correspond with the illustrations of FIGS. 9, 10 and11, except that a high K dielectric such as Al₂O₃ (K=9-10) is used inthe gate stack rather than SiO₂ (K=4). For example, the illustrationsshow a high K dielectric is used as the base dielectric for both thecharge blocking layer and the tunnel layer. The high K dielectric allowsthe device to be scaled to smaller sizes and allows smaller electricfields and programing voltages to be applied.

FIG. 12 illustrates the average field enhancement due to theincorporation of a high K dielectric and a top injection layer in a gatestack for a nonvolatile floating plate device. The average fieldenhancement due to the Al₂O₃ is approximately 1.6 greater than that forthe illustration of FIG. 9 that used SiO₂ as the gate dielectric; i.e.the average field enhancement is approximately 1.6 of 1.5×. Aprogramming voltage VP₄ of 3.5 to 4 V is applied to the control gate1230. The resulting average electric field E_(AVG) between the chargecenters 1246 and the substrate 1212 is, therefore, reduced to about2.5×10⁶ V/cm.

FIG. 13 illustrates the average field enhancement due to theincorporation of a high K dielectric and a bottom injection layer in agate stack for a nonvolatile floating plate device. The average fieldenhancement due to the Al₂O₃ is approximately 1.6 times greater thanthat for the illustration of FIG. 10 that used SiO₂ as the gatedielectric; i.e. the average field enhancement is approximately 1.6 of1.5×. A programming voltage VP₄ of 3.5 to 4 V is applied to the controlgate 1330. The resulting average electric field E_(AVG) between thecharge centers 1346 and the substrate 1312 is reduced to about 2.5×10⁶V/cm.

FIG. 14 illustrates the average field enhancement due to theincorporation of a high K dielectric and both a top injection layer anda bottom injection layer in a gate stack for a nonvolatile floatingplate device. The average field enhancement due to the Al₂O₃ isapproximately 1.6 times greater than that for the illustration of FIG.11 that used SiO₂ as the gate dielectric; i.e. the average fieldenhancement is approximately 1.6 of 1.7×. A programming voltage VP₄ of3.5 to 4 V is applied to the control gate 1430. The resulting averageelectric field E_(AVG) between the charge centers 1446 and the substrate1412 is reduced to about 2.2×10⁶V/cm.

FIG. 15 is a graph showing floating charge versus average programmingfield for programming voltages applied to a floating gate of aconventional flash device (VP1), a NV floating plate device (VP2), a NVfloating device having a gate stack formed with a single injection layer(VP3), and a NV floating device having a gate stack formed with a high Kdielectric and a single injection layer (VP4). The graph illustratesthat a larger electric field is required to store a desired charge on afloating gate rather than on one of the floating plates. Reducing therequired average programming field reduces the required programmingvoltage, which allows the NV device to be scaled with the other devices.Additionally, reducing the required programming voltage provides amargin with respect to the breakdown of the dielectric. A higher thanrequired programming voltage can be applied to provide a quicker writeor erase. Furthermore, for a generic write or erase speed, suchreduction in programming voltage enhances endurance; i.e. the number ofwrite/erase cycles.

FIG. 16 is a graph showing the relationship between the log of thewrite/erase cycle, or endurance, and the average programming field. Thegraph illustrates a linear relationship between the average programmingfield and endurance such that reducing the average programming field inhalf increases the endurance by almost four orders of magnitude, andreducing the average programming field to one fourth of an originalfield increases the endurance by almost eight orders of magnitude, i.e.by a factor of 100,000,000.

FIG. 17 is one embodiment of a NV floating plate device. The device 1740includes a gate stack 1742 that is formed on a p-type silicon substrate1712 between two n-type diffusion regions 1716 and 1718 in thesubstrate. A gate 1730 is formed on the gate stack 1742. The diffusionregions in the illustrated embodiment are n+ diffusion regions, and thesubstrate is a p substrate. In this embodiment, the substrate functionsas a source electrode (S.E.) and the gate functions as a programmingelectrode (P.E.). One of ordinary skill in the art will understand, uponreading and understanding this disclosure, how to reverse the roles ofthe electrodes to provide the desired device operation. For example, therole of the electrodes could be reversed by placing the tunnel mediaeither adjacent to the silicon substrate or to the gate. The gate may beeither a doped polysilicon gate such as a n+ or p+ diffused silicon, ormay be a metal gate. Examples of a metal gate include TiN and WSi. Oneof ordinary skill in the art will understand, upon reading andunderstanding this disclosure, how to incorporate the gate stack intoboth bulk and SOI silicon based microelectronics technology, includingNMOS, PMOS and CMOS technology. The CMOS technology could either be bulkCMOS or SOI CMOS technology.

FIG. 18 is one embodiment of a single injector layer gate stack orsingle electron injector structure (SEIS) for the NV floating platedevice of FIG. 17. From the source electrode to the program electrode,the gate stack 1842 includes a tunnel medium 1850, a combination high Kcharge blocking and charge storing medium 1860, and an injector medium1854. The injector medium 1854 provides charge transfer through enhancedtunneling. The term charge storing medium connotes a medium that hascharge centers that provide a charge trapping property. According to oneembodiment, the combination high K charge blocking and charge storingmedium 1860 includes nano crystals dispersed into a high K dielectriceither through doping or implantation.

FIG. 19 is one embodiment of a single injector layer gate stack orsingle electron injector structure (SEIS) for the NV floating platedevice of FIG. 17. From the source electrode to the program electrode,the gate stack 1942 includes an injector medium 1956, a tunnel medium1950, and a combination high K charge blocking and charge storing medium1960. This illustrates that the injector medium may be used either asthe top layer (near the program electrode) or as the bottom layer (nearthe source electrode) of the gate structure. According to oneembodiment, the combination high K charge blocking and charge storingmedium 1960 includes nano crystals dispersed into a high K dielectriceither through doping or implantation.

FIG. 20 is one embodiment of the single injector layer gate stack orsingle electron injector structure (SEIS) of FIG. 18. From the sourceelectrode to the program electrode, the gate stack 2042 includes anAl₂O₃ tunnel medium 2050, silicon-rich Al₂O₃ 2060 functioning as thecombination high K charge blocking and charge storing medium, and an SRNinjector medium 2054. Silicon-rich Al₂O₃ 2060 includes dispersed siliconnano crystals to provide the medium with a refractive index sufficientto provide charge centers that trap or store charge.

In this embodiment, as is represented by the chart adjacent to the gatestack, the thickness of the tunnel Al₂O₃ is 6 nm which corresponds to at_(OX) equivalent of about 2.5 nm, the thickness of the silicon-richAl₂O₃ is 10 to 12 nm which corresponds to a t_(OX) equivalent of about 5nm, and the thickness of the injector SRN is 5 nm which corresponds to at_(OX) equivalent of about 1.5 nm. The total equivalent oxide thickness(t_(OX.EQ.TOTAL)) is approximately 9 nm. A programming voltage (V_(P))of 3.6 V provides an effective programming field (E_(P)) of about 4×10⁶V/cm. A number of variables may be manipulated. An effective range forthe Al₂O₃ tunnel medium is 3 to 10 nm, for the silicon-rich Al₂O₃ is 6to 30 nm, and for the SRN injector medium is 3 to 10 nm. One of ordinaryskill in the art will understand, upon reading and understanding thisdisclosure, how to manipulate these variables to achieve the desiredcharacteristics for the gate stack.

FIG. 21 is one embodiment of the single injector layer gate stack ofFIG. 18. From the source electrode to the program electrode, the gatestack 2142 includes a SiO₂ tunnel medium 2150, silicon rich Al₂O₃ 2160functioning as the combination high K charge blocking and charge storingmedium, and an SRN injector medium 2154.

In this embodiment, as is represented by the chart adjacent to the gatestack, the thickness of the tunnel SiO₂ is 5 nm which corresponds to at_(OX) of about 5 nm, the thickness of the silicon-rich Al₂O₃ is 10 to12 nm which corresponds to a t_(OX) equivalent of about 5 nm, and thethickness of the injector SRN is 5 nm which corresponds to a t_(OX)equivalent of about 1.5 nm. The total equivalent oxide thickness(t_(OX.EQ.TOTAL)) is approximately 11.5 nm. A programming voltage(V_(P)) of 4.6 V provides an effective programming field (E_(P)) ofabout 4×10⁶ V/cm. A number of variables may be manipulated. An effectiverange for the SiO₂ tunnel medium is 4 to 8 nm, for the silicon-richAl₂O₃ is 6 to 30 nm, and for the SRN injector medium is 3 to 10 nm. Oneof ordinary skill in the art will understand, upon reading andunderstanding this disclosure, how to manipulate these variables toachieve the desired characteristics for the gate stack.

FIG. 22 is one embodiment of a single injector layer gate stack orsingle electron injector structure (SEIS) for the NV floating platedevice of FIG. 17. From the source electrode to the program electrode,the gate stack 2242 includes a tunnel medium 2250, a charge storingmedium 2264 with nano crystals, a high K charge blocking medium 2262,and an injector medium 2254. According to one embodiment, the nanocrystals in the charge storing medium are disposed in a high Kdielectric either through doping or implantation.

FIG. 23 is one embodiment of a single injector layer gate stack orsingle electron injector structure (SEIS) for the NV floating platedevice of FIG. 17. From the source electrode to the program electrode,the gate stack 2342 includes an injector medium 2356, a tunnel medium2350, a charge storing medium 2364 with nano crystals, and a high Kcharge blocking medium 2362. According to one embodiment, the nanocrystals in the charge storing medium are disposed in a high Kdielectric either through doping or implantation.

FIG. 24 is one embodiment of the single injector layer gate stack ofFIG. 22. From the source electrode to the program electrode, the gatestack 2442 includes an Al₂O₃ tunnel medium 2450, Al₂O₃ with silicon nanocrystals 2464 functioning as a charge storing medium, Al₂O₃ 2462functioning as a high K charge blocking medium, and an SRN injectormedium 2454.

In this embodiment, as is represented by the chart adjacent to the gatestack, the thickness of the tunnel Al₂O₃ is 5 nm which corresponds to at_(OX) equivalent of about 2.5 nm, the thickness of the Al₂O₃ withsilicon nano crystals is 4 nm which corresponds to a t_(OX) equivalentof about 1.6 nm, the thickness of the blocking Al₂O₃ is 10 nm whichcorresponds to a t_(OX) equivalent of about 4.5 nm, and the thickness ofthe injector SRN is 5 nm which corresponds to a t_(OX) equivalent ofabout 1.5 nm. The total equivalent oxide thickness (t_(OX EQ.TOTAL)) isapproximately 10 nm. A programming voltage (V_(P)) of 4 V provides aneffective programming field (E_(P)) of about 4×10⁶ V/cm. A number ofvariables may be manipulated. An effective range for the Al₂O₃ tunnelmedium is 5 to 8 nm, for the Al₂O₃ with silicon nano crystals is 3 to 5nm, for the blocking Al₂O₃ is 6 to 30 nm, and for the SRN injectormedium is 3 to 10 nm. One of ordinary skill in the art will understand,upon reading and understanding this disclosure, how to manipulate thesevariables to achieve the desired characteristics for the gate stack.

FIG. 25 is one embodiment of a double injector layer gate stack ordouble electron injector structure (DEIS) for the NV floating platedevice of FIG. 17. From the source electrode to the program electrode,the gate stack 2542 includes an injector medium 2556, a tunnel medium2550, a combination charge blocking and storing medium 2560, and aninjector medium 2554. The use of two injector layers provides furtherfield enhancements as provided above.

FIG. 26 is one embodiment of the double injector layer gate stack ofFIG. 25. From the source electrode to the program electrode, the gatestack 2642 includes an SRN injector medium 2656, an Al₂O₃ tunnel medium2650, silicon rich Al₂O₃ 2660 functioning as the combination high Kcharge blocking and charge storing medium, and an SRN injector medium2654.

In this embodiment, as is represented by the chart adjacent to the gatestack, the thickness of the first injector SRN that is deposited “NH₃”or “NO” surface treated substrate is 5 nm which corresponds to a t_(OX)equivalent of about 2.5 nm, the thickness of the tunnel Al₂O₃ is 5 to 6nm which corresponds to a t_(OX) equivalent of about 2.5 nm, thethickness of the silicon-rich Al₂O₃ is 10 to 12 nm which corresponds toa t_(OX) equivalent of about 5 nm, and the thickness of the secondinjector SRN is 5 nm which corresponds to a t_(OX) equivalent of about1.5 nm. The total equivalent oxide thickness (t_(OX.EQ.TOTAL)) isapproximately 11.5 nm. A programming voltage (V_(P)) of 3 to 3.3 Vprovides an effective programming field (E_(P)) of about 2.6 to 3.0×10⁶V/cm. A number of variables may be manipulated. An effective range forthe first SRN injector media is 3 to 10 nm, for the Al₂O₃ tunnel mediumis 5 to 8 nm, for the silicon-rich Al₂O₃ is 6 to 30 nm, and for thesecond SRN injector medium is 3 to 10 nm. One of ordinary skill in theart will understand, upon reading and understanding this disclosure, howto manipulate these variables to achieve the desired characteristics forthe gate stack.

FIG. 27 is one embodiment of a double injector layer gate stack ordouble electron injector structure (DEIS) for the NV floating platedevice of FIG. 17. From the source electrode to the program electrode,the gate stack 2742 includes an injector medium 2756, a tunnel medium2750, a charge storing medium 2764, a charge blocking medium 2762, andan injector medium 2754.

FIG. 28 is one embodiment of the double injector layer gate stack ofFIG. 27. From the source electrode to the program electrode, the gatestack 2842 includes an SRN injector medium 2856, an Al₂O₃ tunnel medium2850, Al₂O₃ with silicon nano crystals 2864 functioning as a chargestoring medium, Al₂O₃ functioning as a charge blocking medium 2862, andan SRN injector medium 2854.

In this embodiment, as is represented by the chart adjacent to the gatestack, the thickness of the first injector SRN that is deposited “NH₃”or “NO” surface treated substrate is 5 nm which corresponds to a t_(OX)equivalent of about 2.5 nm, the thickness of the tunnel Al₂O₃ is 5 to 6nm which corresponds to a t_(OX) equivalent of about 2.5 nm, thethickness of the Al₂O₃ with silicon nano crystals is 4 nm whichcorresponds to a t_(OX) equivalent of about 1.6 nm, the thickness of theblocking Al₂O₃ is 10 nm which corresponds to a t_(OX) equivalent ofabout 4.5 nm, and the thickness of the injector SRN is 5 nm whichcorresponds to a t_(OX) equivalent of about 1.5 nm. The total equivalentoxide thickness (t_(OX.EQ.TOTAL)) is approximately 12.6 nm. Aprogramming voltage (V_(P)) of 3.25 V provides an effective programmingfield (E_(P)) of about 2.6×10⁶ V/cm. A number of variables may bemanipulated. An effective range for the first SRN injector medium is 3to 10 nm, for the Al₂O₃ tunnel medium is 5 to 8 nm, for the Al₂O₃ withsilicon nano crystals is 3 to 5 nm, for the blocking Al₂O₃ is 6 to 30nm, and for the second SRN injector medium is 3 to 10 nm. One ofordinary skill in the art will understand, upon reading andunderstanding this disclosure, how to manipulate these variables toachieve the desired characteristics for the gate stack.

Injector SRN was provided as an example of an injector medium in theabove examples. One of ordinary skill in the art will understand, uponreading and understanding this disclosure, that other materials may beused as an injector medium. These materials include silicon-richaluminum nitride and SRO. Al₂O₃ is not an effective diffusion barrierfor certain dopants like phosphorus for an n+ gate. The injector mediaSRN and silicon-rich aluminum nitride function as a diffusion barrierfor doped polysilicon gates to prevent phosphorous, for example, fromdiffusing into Al₂O₃. A diffusion barrier is not needed if a metal gateis used. When injector SRN is deposited over a silicon substrate, thesubstrate is “NO” or “NH₃” surface treated to reduce the interfacestates density and leakage at the silicon substrate. This surfacetreatment adds 1 nm to the equivalent of additional oxide thickness(t_(OX.EQ)) of the injector SRN. This thicker t_(OX) equivalent isillustrated in FIG. 25, where the top injector SRN has a t_(OX)equivalent of 1.5 nm and the bottom injector SRN deposited over “NO” or“NH₃” surface treated substrate has a t_(OX) equivalent of 2.5 nm.

Al₂O₃ was provided as an example of a high K charge blocking medium inthe above examples. One of ordinary skill in the art will understand,upon reading and understanding this disclosure, that other materials maybe used as a high K charge medium. A high K charge medium is a materialthat has a K greater than the K of silicon. These materials includeoxides, nitrides and silicates of Tantalum, Titanium, Zirconium, Hafniumand Praseodymium. Additionally, these materials may further be dopedwith complex high K dielectrics such as barium strontium titanate (BST),transition metal, and metal oxides such as tantalum pentoxide (Ta₂O₅),titanium dioxide (TiO₂), tantalum nitride (TaN), zirconium oxide (ZrO₂),and praseodymium oxide (Pr₂O₃).

Silicon rich Al₂O₃ was provided as an example of a combination high Kcharge blocking and charge storing medium in the above examples. One ofordinary skill in the art will understand, upon reading andunderstanding this disclosure, that other materials may be used as acombination high K charge blocking and charge storing medium. Thesematerials include any of the high K charge blocking media provided abovewith nano crystals dispersed through the media. Various embodimentsinclude a high K charge blocking media with silicon nano crystals, goldnano crystals, tungsten nano crystals, and/or silicided tungsten nanocrystals.

In the examples provided above it was indicated that the nano crystalswere dispersed into a high K dielectric either through doping orimplantation. One of ordinary skill in the art will understand, uponreading and understanding this disclosure, that the nano crystals may bedistributed using a number of techniques, including simultaneoussputtering, implantation, chemical vapor deposition, atomic layerdeposition (ALD) and molecular beam epitaxy (MBE).

Al₂O₃ and SiO₂ were provided as examples of a tunnel medium in the aboveexamples. These materials may be interchanged with each other. Al₂O₃ hasa higher dielectric constant, whereas SiO₂ is easier to fabricate.

FIG. 29 illustrates a memory device with an array of NV memory cellsaccording to the present invention. The memory device 2970 includes anarray 2972 of NV memory cells as described above. A grid of rowconductors 2974 and column conductors 2976 are used to selectivelywrite/erase a memory cell 2978. Additionally, the memory device 2970includes power circuitry 2980, row select circuitry 2982 and columnselect circuitry 2984. The row select circuitry and column selectcircuitry cooperate with each other to select a memory cell to bewritten or erased using power provided by the power circuitry.Input/output circuitry and pads, not shown, defines the inputs andoutputs of such device. According to various embodiments, the memorydevice is used in a number of nonvolatile multi-threshold FET devicessuch as PROM, FLASH, EPROM, EEPROM, and antifuse devices.

Furthermore, one of ordinary skill in the art will understand, uponreading and comprehending this disclosure, how to incorporate NV memorycells according to the present invention into a larger electronicsystem. Such an electronic system includes a processor orarithmetic/logic unit (ALU), a control unit, a memory device unit and aninput/output (I/O) device. Generally, such an electronic system willhave a native set of instructions that specify operations to beperformed on data by the processor and other interactions between teprocessor, the memory device unit and the I/O devices. The memory deviceunit contains the data plus a stored list of instructions. The controlunit coordinates all operations of the processor, the memory device andthe I/O devices by continuously cycling through a set of operations thatcause instructions to be fetched from the memory device and executed.Additionally, one of ordinary skill in the art will understand, uponreading and comprehending this disclosure, how to incorporate NV memorydevice and arrays according to the present invention with a random-logicdevice or programmable logic array (PLA) to program or alter logicalfunctions or logical states of such programmable logic device (PLD)and/or alterable logic device (ALD). The NV memory device and arrays arecoupled to input/output nodes of the rand-logic device or PLA asappropriate for the desired function

The figures presented and described in detail above are similarly usefulin describing the method aspects of the present subject matter. One ofordinary skill in the art will understand these methods upon reading andunderstanding this disclosure.

CONCLUSION

The present subject matter provides a gate stack for a nonvolatilemulti-threshold FET device that promotes low power, low programmingvoltage for write and erase cycles, and improved endurance. A highercapacitive coupling efficiency is achieved by replacing floating gatetechnology with floating plate (charge center) technology, and using ahigh K dielectric. Furthermore, an injector medium enhances thetunneling effect. The gate stack is capable of being used inapplications which are compatible and scalable with power supply andlithography scaling. Additionally, the gate stack is capable of beingused in devices and circuits that readily integrate with general fixedthreshold memory and logic devices, circuits and functions. Due thelower programming voltage and electric field, which is considerably lessthan the breakdown of the dielectric, the gate stack promotes fasterwriting and erasing capabilities.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement which is calculated to achieve the same purpose maybe substituted for the specific embodiment shown. This application isintended to cover any adaptations or variations of the presentinvention. It is to be understood that the above description is intendedto be illustrative, and not restrictive. Combinations of the aboveembodiments, and other embodiments will be apparent to those of skill inthe art upon reviewing the above description. The scope of the inventionincludes any other applications in which the above structures andfabrication methods are used. The scope of the invention should bedetermined with reference to the appended claims, along with the fullscope of equivalents to which such claims are entitled.

1. A gate stack, comprising: a tunnel medium; a high K charge blockingand charge storing medium disposed on the tunnel medium; and an injectormedium operably disposed with respect to the tunnel medium and the highK charge blocking and charge storing medium to provide charge transportby enhanced tunneling.
 2. The gate stack of claim 1, wherein theinjector medium is disposed on the high K charge blocking and chargestoring medium.
 3. The gate stack of claim 1, wherein the tunnel mediumis disposed on the injector medium.
 4. The gate stack of claim 1,wherein the tunnel medium includes tunnel Al₂O₃.
 5. The gate stack ofclaim 1, wherein the tunnel medium includes tunnel SiO₂.
 6. The gatestack of claim 1, wherein the high K charge blocking and charge storingmedium includes a high K charge blocking medium disposed on a high Kcharge storing medium with nano crystals.
 7. The gate stack of claim 1,wherein the high K charge blocking and charge storing medium includestantalum.
 8. The gate stack of claim 1, wherein the high K chargeblocking and charge storing medium includes titanium.
 9. The gate stackof claim 1, wherein the high K charge blocking and charge storing mediumincludes zirconium.
 10. The gate stack of claim 1, wherein the high Kcharge blocking and charge storing medium includes hafnium.
 11. The gatestack of claim 1, wherein the high K charge blocking and charge storingmedium includes praseodymium.
 12. The gate stack of claim 1, wherein thehigh K charge blocking and charge storing medium includes BST.
 13. Thegate stack of claim 1, wherein the injector medium includes injectorSRN.
 14. The gate stack of claim 1, wherein the injector medium includesinjector SRO.
 15. The gate stack of claim 1, wherein the injector mediumincludes silicon rich aluminum nitride.
 16. The gate stack of claim 1,wherein the tunnel medium, the high K charge blocking and charge storingmedium, and the injector medium are scalable with power supply andlithography scaling.
 17. A gate stack, comprising: a tunnel medium; ahigh K charge blocking and charge storing medium disposed on the tunnelmedium, wherein the high K charge blocking and charge storing mediumincludes nano crystals for providing charge trapping charge centers; andan injector medium operably disposed with respect to the tunnel mediumand the high K charge blocking and charge storing medium to providecharge transport by enhanced tunneling.
 18. The gate stack of claim 17,wherein the nano crystals include silicon nano crystals.
 19. The gatestack of claim 17, wherein the nano crystals include gold nano crystals.20. The gate stack of claim 17, wherein the nano crystals includetungsten nano crystals.
 21. The gate stack of claim 17, wherein the nanocrystals include silicided nano crystals.
 22. A memory cell, comprising:a substrate including diffused regions that form a source region and adrain region; a gate stack disposed on the substrate between the sourceregion and the drain region; and a gate disposed on the gate stack,wherein the gate stack includes: a tunnel medium; a high K chargeblocking and charge storing medium disposed on the tunnel medium; and aninjector medium operably disposed with respect to the tunnel medium andthe high K charge blocking and charge storing medium to provide chargetransport by enhanced tunneling.
 23. The memory cell of claim 22,wherein the injector medium is disposed on the high K charge blockingand charge storing medium.
 24. The memory cell of claim 22, wherein thetunnel medium is disposed on the injector medium.
 25. The memory cell ofclaim 22, wherein the tunnel medium includes tunnel Al₂O₃.
 26. Thememory cell of claim 22, wherein the tunnel medium includes tunnel SiO₂.27. The memory cell of claim 22, wherein the high K charge blocking andcharge storing medium includes a high K charge blocking medium disposedon a high K charge storing medium with nano crystals.
 28. The memorycell of claim 22, wherein the injector medium includes injector SRN. 29.The memory cell of claim 22, wherein the injector medium includesinjector SRO.
 30. The memory cell of claim 22, wherein the injectormedium includes silicon rich aluminum nitride.
 31. The memory cell ofclaim 22, wherein the tunnel medium, the high K charge blocking andcharge storing medium, and the injector medium are scalable with powersupply and lithography scaling.
 32. A nonvolatile memory device,comprising: an array of memory cells operably coupled to a grid of rowlines and column lines; row select circuitry for selecting a row ofmemory cells; and column select circuitry for selecting a column ofmemory cells, wherein the row select circuitry and the column selectcircuitry cooperate to select a memory cell in the selected row and theselected column for application of a programming voltage; and whereineach memory cell includes: a substrate including diffused regions thatform a source region and a drain region; a gate stack disposed on thesubstrate between the source region and the drain region; and a gatedisposed on the gate stack, wherein the gate stack includes: a tunnelmedium; a high K charge blocking and charge storing medium disposed onthe tunnel medium; and an injector medium operably disposed with respectto the tunnel medium and the high K charge blocking and charge storingmedium to provide charge transport by enhanced tunneling.
 33. Thenonvolatile memory device of claim 32, wherein the injector medium isdisposed on the high K charge blocking and charge storing medium. 34.The nonvolatile memory device of claim 32, wherein the tunnel medium isdisposed on the injector medium.
 35. The nonvolatile memory device ofclaim 32, wherein the tunnel medium includes tunnel Al₂O₃.
 36. Thenonvolatile memory device of claim 32, wherein the tunnel mediumincludes tunnel SiO₂.
 37. The nonvolatile memory device of claim 32,wherein the high K charge blocking and charge storing medium includes ahigh K charge blocking medium disposed on a high K charge storing mediumwith nano crystals.
 38. The nonvolatile memory device of claim 32,wherein the injector medium includes injector SRN.
 39. The nonvolatilememory device of claim 32, wherein the injector medium includes injectorSRO.
 40. The nonvolatile memory device of claim 32, wherein the injectormedium includes silicon rich aluminum nitride.
 41. The nonvolatilememory device of claim 32, wherein the tunnel medium, the high K chargeblocking and charge storing medium, and the injector medium are scalablewith power supply and lithography scaling.
 42. An electronic system,comprising: a processor; and a nonvolatile memory device coupled to theprocessor, the nonvolatile memory device including: an array of memorycells operably coupled to a grid of row lines and column lines; rowselect circuitry for selecting a row of memory cells; and column selectcircuitry for selecting a column of memory cells, wherein the row selectcircuitry and the column select circuitry cooperate to select a memorycell in the selected row and the selected column for application of aprogramming voltage; and wherein each memory cell includes: a substrateincluding diffused regions that form a source region and a drain region;a gate stack disposed on the substrate between the source region and thedrain region; and a gate disposed on the gate stack, wherein the gatestack includes: a tunnel medium; a high K charge blocking and chargestoring medium disposed on the tunnel medium; and an injector mediumoperably disposed with respect to the tunnel medium and the high Kcharge blocking and charge storing medium to provide charge transport byenhanced tunneling.
 43. A gate stack, comprising: a tunnel medium; ahigh K charge blocking and charge storing medium disposed on the tunnelmedium, wherein the high K charge blocking and charge storing mediumincludes silicon-rich Al₂O₃; and an injector medium operably disposedwith respect to the tunnel medium and the high K charge blocking andcharge storing medium to provide charge transport by enhanced tunneling.44. A memory cell, comprising: a substrate including diffused regionsthat form a source region and a drain region; a gate stack disposed onthe substrate between the source region and the drain region; and a gatedisposed on the gate stack, wherein the gate stack includes: a tunnelmedium; a high K charge blocking and charge storing medium disposed onthe tunnel medium, wherein the high K charge blocking and charge storingmedium includes silicon-rich Al₂O₃; and an injector medium operablydisposed with respect to the tunnel medium and the high K chargeblocking and charge storing medium to provide charge transport byenhanced tunneling.
 45. A nonvolatile memory device, comprising: anarray of memory cells operably coupled to a grid of row lines and columnlines; row select circuitry for selecting a row of memory cells; andcolumn select circuitry for selecting a column of memory cells, whereinthe row select circuitry and the column select circuitry cooperate toselect a memory cell in the selected row and the selected column forapplication of a programming voltage; and wherein each memory cellincludes: a substrate including diffused regions that form a sourceregion and a drain region; a gate stack disposed on the substratebetween the source region and the drain region; and a gate disposed onthe gate stack, wherein the gate stack includes: a tunnel medium; a highK charge blocking and charge storing medium disposed on the tunnelmedium, wherein the high K charge blocking and charge storing mediumincludes silicon-rich Al₂O₃; and an injector medium operably disposedwith respect to the tunnel medium and the high K charge blocking andcharge storing medium to provide charge transport by enhanced tunneling.46. An electronic system, comprising: a processor; and a nonvolatilememory device coupled to the processor, the nonvolatile memory deviceincluding: an array of memory cells operably coupled to a grid of rowlines and column lines; row select circuitry for selecting a row ofmemory cells; and column select circuitry for selecting a column ofmemory cells, wherein the row select circuitry and the column selectcircuitry cooperate to select a memory cell in the selected row and theselected column for application of a programming voltage; and whereineach memory cell includes: a substrate including diffused regions thatform a source region and a drain region; a gate stack disposed on thesubstrate between the source region and the drain region; and a gatedisposed on the gate stack, wherein the gate stack includes: a tunnelmedium; a high K charge blocking and charge storing medium disposed onthe tunnel medium, wherein the high K charge blocking and charge storingmedium includes silicon-rich Al₂O₃; and an injector medium operablydisposed with respect to the tunnel medium and the high K chargeblocking and charge storing medium to provide charge transport byenhanced tunneling.